发明名称 FIELD EMISSION TYPE ELECTRON SOURCE
摘要 <p>PROBLEM TO BE SOLVED: To provide a field emission type electron source applicable to a device required to reduce angular distribution in an electron emitting direction like an electron source of a high precision display. SOLUTION: A strong electric field drift layer 6 is composed of drift parts 6a formed of a plurality of oxidized porous polycrystal silicon layers formed at the intersecting parts of lower electrodes 12a and surface electrodes 7, and separation parts 6b formed of polycrystal silicon layers which fill spaces between the drift parts 6a. Barrier ribs 13 are provided for limiting broadening of electron beams emitted from each electron source element 10a, between one surface side of an insulating substrate 11 and a face plate 30 arranged opposedly to the insulating substrate 11.</p>
申请公布号 JP2003016924(A) 申请公布日期 2003.01.17
申请号 JP20010199838 申请日期 2001.06.29
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HONDA YOSHIAKI;AIZAWA KOICHI;KOMODA TAKUYA;KUNUGIBARA TSUTOMU;WATABE YOSHIFUMI;HATAI TAKASHI;BABA TORU
分类号 H01J29/87;H01J1/312;H01J31/12;(IPC1-7):H01J1/312 主分类号 H01J29/87
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