Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

摘要

A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO.

主权项

1. A two-terminal re-writeable non-volatile memory element comprising:
a first conductive metal oxide (CMO) layer including mobile oxygen ions; a second CMO layer in contact with the first CMO layer and configured to cooperate with the first CMO layer to form an ion obstruction barrier positioned in a portion of both the first CMO layer and the second CMO layer and operative to inhibit transport of other mobile ions when a voltage for data operations is not being applied across a first electrode and a second electrode; and an insulating metal oxide (IMO) layer formed in contact with the second CMO layer; wherein the IMO layer is permeable to the mobile oxygen ions when a write voltage is applied across the first electrode and the second electrode; and wherein the second CMO layer has a second thickness that is less than a first thickness of the first CMO layer.