Semiconductor device and method for manufacturing the same

摘要

A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.

主权项

1. A semiconductor device, comprising:
a nitride semiconductor layer; a silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a tapered shape; and a gate electrode formed on the nitride semiconductor layer exposed in the first opening and formed on a surface of the silicon nitride film; wherein the gate electrode is composed of a first metal layer and a second metal layer formed on the first metal layer, the first metal layer directly contacts with the nitride semiconductor layer and the surface of the silicon nitride film, wherein a surface of a side wall of the gate electrode is composed by the second metal layer, the side wall of the gate electrode separates from the silicon nitride film via a cavity and the second metal layer of the gate electrode is exposed in the cavity.