发明名称 Process for making fine pitch connections between devices and structure made by the process
摘要 A semiconductor device structure including fine-pitch connections between chips is fabricated using stud/via matching structures. The stud and via are aligned and connected, thereby permitting fine-pitch chip placement and electrical interconnections. A chip support is then attached to the device. A temporary chip alignment structure includes a transparent plate exposed to ablating radiation; the plate is then detached and removed. This method permits interconnection of multiple chips (generally with different sizes, architectures and functions) at close proximity and with very high wiring density. The device may include passive components located on separate chips, so that the device includes chips with and without active devices.
申请公布号 US2003015788(A1) 申请公布日期 2003.01.23
申请号 US20020213872 申请日期 2002.08.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 POGGE H. BERNHARD;PRASAD CHANDRIKA;YU ROY
分类号 H01L21/68;H01L21/98;H01L23/538;(IPC1-7):H01L23/485 主分类号 H01L21/68
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