Metal-insulator-metal (MIM) capacitor

摘要

There is disclosed a metal-insulator-metal, MIM, capacitor. The MIM capacitor comprises a MIM stack formed within an interconnect metal layer. The interconnect metal layer is utilized as an electrical connection to a metal layer of the MIM stack.

主权项

1. A method manufacturing a metal-insulator-metal, MIM, capacitor, comprising:
forming a MIM stack within an interconnect metal layer, the interconnect metal layer comprising a first interconnect metal layer part and a second interconnect metal layer part, wherein the interconnect metal layer forms an electrical connection to a metal layer of the MIM stack, the method further comprising, forming an opening in a substrate; forming a via metal layer in the opening of the substrate so as to form a via in the substrate; forming the first interconnect metal layer part on the substrate: forming the MIM stack on the first interconnect metal layer part; forming the second interconnect metal layer part on the MIM stack; forming a mask layer on the second interconnect metal layer part: patterning the mask layer to expose at least one region of the interconnect layer and to retain at least one portion of the mask layer above the MIM stack; and etching the exposed at least one region through the second interconnect metal layer part and through the first interconnect metal layer part to form at least one trench in the substrate; wherein a horizontal dimension of the at least a portion of the mask layer above the MIM stack is less than the corresponding horizontal dimension of the MIM stack, such that the step of etching comprises etching through a portion of the MIM stack.