| 主权项 |
1. A CMOS image sensor CMOS image sensor including an infrared pixel with enhanced spectral characteristics, comprising:
a photodetection layer formed over a semiconductor substrate and including a first photodiode for receiving light of a first color, a second photodiode for receiving light of a second color with a wavelength longer than that of the first color, a third photodiode for receiving light of a third color with a wavelength longer than that of the second color, and a fourth photodiode for receiving light of an infrared area; an interconnection layer formed over the photodetection layer; an insulating layer formed over the interconnection layer; a color filter layer formed over the insulating layer and including a first color filter, a second color filter, a third color filter, and an infrared filter formed at positions respectively corresponding to the first photodiode, the second photodiode, the third photodiode, and the fourth photodiode; a transparent planar layer formed over the color filter layer; and a microlens layer formed over the transparent planar layer and including a first microlens, a second microlens, a third microlens, and a fourth microlens formed at positions respectively corresponding to the first color filter, the second color filter, the third color filter, and the infrared filter, wherein the insulating layer of areas respectively corresponding to the first color filter, the second color filter, the third color filter and the infrared filter, has a stepped portion under the infrared filter so that each thickness of the first color filter, the second color filter and the third color filter are substantially the same, and a thickness of the infrared filter at the stepped portion is greater than each thickness of the first color filter, the second color filter and the third color filter. |
