发明名称 Display substrate and method of manufacturing a display substrate
摘要 A display substrate includes an active pattern, a gate electrode, a first insulation layer and a pixel electrode. The active pattern is disposed on a base substrate. The active pattern includes a metal oxide semiconductor. The gate electrode overlaps the active pattern. The first insulation layer covers the gate electrode and the active pattern, and a contact hole is defined in the first insulation layer. The pixel electrode is electrically connected to the active pattern via the contact hole penetrating the first insulation layer. A first angle defined by a bottom surface of the first insulation layer and a sidewall of the first insulation layer exposed by the contact hole is between about 30° and about 50°.
申请公布号 US9484362(B2) 申请公布日期 2016.11.01
申请号 US201414262761 申请日期 2014.04.27
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Kim Dae-Ho;Na Hyun-Jae;Kim Jae-Neung;Jeong Yu-Gwang;Cha Myoung-Geun;Kim Sang-Gab
分类号 H01L29/04;H01L27/12;H01L29/417 主分类号 H01L29/04
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A display substrate, comprising: an active pattern on a base substrate, the active pattern comprising a metal oxide semiconductor; a gate electrode overlapping the active pattern; a gate insulation layer pattern between the active pattern and the gate electrode; an insulation member comprising a first insulation layer covering the gate electrode: a portion of the first insulation layer extended to surround a side surface of the gate insulation layer pattern and to contact a top surface of the active pattern, a contact hole which is defined in the extended portion of the first insulation layer, the contact hole exposing a sidewall of the extended portion of the first insulation layer; and a pixel electrode in contact with the active pattern at the contact hole to be electrically connected to the active pattern, wherein a first angle defined by a bottom surface of the insulation member and the a sidewall of the extended portion of the first insulation layer exposed by the contact hole, is between about 30° and about 50° wherein a portion of the pixel electrode in contact with the active pattern is extended along the exposed sidewall of the extended portion of the first insulation layer, and wherein the extended portion of the pixel electrode has a uniform thickness at the active pattern and along the exposed sidewall of the extended portion of the first insulation layer.
地址 KR