SEMICONDUCTOR STORAGE ELEMENT, SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING THE SAME

摘要

PURPOSE: To solve the problem that since a semiconductor flash memory required for high reliability must output and input electrons through an oxide film obtained by directly oxidizing a silicon substrate, a using voltage becomes large from positive to negative. CONSTITUTION: High reliability is realized by storing a charge in regions divided into a plurality. A migration of the electrons is performed through the oxide film or the like by not only the oxide film obtained by directly thermally oxidation of the substrate having high reliability with the high reliability as a background but also through the oxide film or the like deposited via a CVD, and hence controlled by potentials of the same polarity at the time of writing and erasing information.