发明名称 METHOD OF DRAWING PATTERN AND METHOD OF MANUFACTURING MASK FOR EXPOSURE
摘要 <p>PROBLEM TO BE SOLVED: To enhance throughput by shortening drawing time per total area of a sample without lowering drawing accuracy for pattern regions that require high accuracy. SOLUTION: This method of drawing patterns uses an electron beam for drawing desired patterns on a sample with a drawing apparatus having a plurality of drawing conditions, wherein a plurality of pattern regions on the same sample are classified, depending on the drawing accuracy required for each region, into four classes (for high-accuracy drawing, for medium-accuracy drawing, for low-accuracy drawing 1, and for low-accuracy drawing 2), and pattern regions belonging to the same class are drawn with the same drawing condition, while pattern regions belonging to different classes are drawn with different drawing conditions.</p>
申请公布号 JP2003077821(A) 申请公布日期 2003.03.14
申请号 JP20010270487 申请日期 2001.09.06
申请人 TOSHIBA CORP;DAINIPPON PRINTING CO LTD 发明人 UGAJIN KUNIHIRO
分类号 G03F1/20;G03F1/68;G03F1/78;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/20
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