| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride base semiconductor laser structure which can output laser light of a fundamental transverse mode approximate to a circular form and has a low operating current and element resistance. SOLUTION: In the gallium nitride base semiconductor laser, a lower clad layer 2, an active layer 4, an upper clad layer 7 and an electrode are laminated in this order on a base layer composed of GaN, one or two or more light guide layer 1 is formed between the active layer and the lower clad layer and/or between the active layer and the upper clad layer, and oscillation is obtained at a wavelength of 380 nm or longer and 420 nm or shorter. When the total layer thickness of the light guide layer is h (μm), the thickness of the lower clad layer 2 is d1 (μm), Al composition of AlGaN bulk crystal having refractive index equal to a mean refractive index of the lower clad layer 2 is x, and Al composition of AlGaN bulk crystal having refractive index equal to a mean refractive index of the upper clad layer 7 is y, conditions 0.15<=h,|x-y|<=0.02, 0.02<=x<=0.06 and 0.34x-0.49<=d1 +2h are satisfied.
|
