| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase change type nonvolatile memory cell capable of recording/erasing at a high speed, and to provide a memory array using the phase change type nonvolatile memory cell and a method for recording information in the phase change type nonvolatile memory cell. SOLUTION: The phase change type nonvolatile memory cell comprises a phase change recording layer containing a phase change material represented by an A(z)M(d)L(e)Sb(x)Te(y) of a composition formula, (wherein z+d+e+x+y=100 atomic %, 0<z, x, y<100 atomic %, 0<=d<100 atomic %, and 0<=e<100 atomic %). The memory cells are connected to transistors to form a memory array. Further, electrical signals in which recording and erasing pulse widths are equalized, are applied to the memory cell. |
