发明名称 |
High-voltage, high-cutoff-frequency electronic MOS device |
摘要 |
An MOS electronic device is formed to reduce drain/gate capacity and to increase cutoff frequency. The device includes a field insulating layer that covers a drain region, delimits an active area with an opening, houses a body region in the active area, and houses a source region in the body region. A portion of the body region between drain and source regions forms a channel region. A polycrystalline silicon structure extends along the edge of the opening, partially on the field insulating and active layers. The polycrystalline silicon structure includes a gate region extending along a first portion of the edge on the channel region and partially surrounding the source region and a non-operative region extending along a second portion of the edge, electrically insulated and at a distance from the gate region.
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申请公布号 |
US2003067036(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20020237553 |
申请日期 |
2002.09.09 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
DEPETRO RICCARDO;PONZA ANNA;GALLERANO ANTONIO |
分类号 |
H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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