发明名称 |
Semiconductor wafer processing apparatus and method |
摘要 |
A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.
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申请公布号 |
US6549393(B2) |
申请公布日期 |
2003.04.15 |
申请号 |
US20010946615 |
申请日期 |
2001.09.06 |
申请人 |
HITACHI, LTD. |
发明人 |
KANNO SEIICHIRO;KAWAHARA HIRONOBU;SUEHIRO MITSURU;KANAI SABURO;YOSHIOKA KEN |
分类号 |
H01L21/302;H01L21/00;H01L21/26;H01L21/3065;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H02N13/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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