发明名称 |
GAS-SEPARATED CATALYST CVD SYSTEM, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURED BY USING THE SYSTEM, AND METHOD OF MANUFACTURING THE DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a catalyst CVD system that can uniformly form an Si- based thin film in a high quality and large area at a high speed, and to provide a photoelectric conversion device manufactured by using the CVD system and a method of manufacturing the conversion device. SOLUTION: The catalyst CVD system forms the Si-based thin film on a substrate by blowing out a hydrogen gas and an Si-based gas from a shower plate having a plurality of gas blowing-out holes. The introducing route of the hydrogen gas is separated from that of the Si-based gas until the route passes through the shower plate. In addition, a thermal catalyzer connected to a DC power source and having an active hydrogen density adjusting function and a heat radiation reducing structure is installed to the hydrogen gas introducing route on the upstream side of the shower plate. Moreover, the distance between the adjacent two gas blowing-out holes of the shower plate is made shorter than that between the shower plate and substrate.</p> |
申请公布号 |
JP2003124133(A) |
申请公布日期 |
2003.04.25 |
申请号 |
JP20010322147 |
申请日期 |
2001.10.19 |
申请人 |
KYOCERA CORP |
发明人 |
SHINRAKU KOUICHIROU;SHIROMA HIDEKI;KOMOTA MANABU;FUKUI KENJI |
分类号 |
C23C16/44;H01L21/205;H01L31/04;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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