发明名称 Charge coupled device and method of fabricating the same
摘要 A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first transfer gate sequentially formed between the photodiodes arranged in the row direction, a block insulating layer formed along the center of the first transfer gate, a second interlevel insulating layer formed on the first transfer gate, second and third transfer gates formed on the first transfer gate, being isolated from each other on the block insulating layer, a third interlevel insulating layer formed on the second and third transfer gates, and a fourth transfer gate formed on the third interlevel insulating layer, being placed on the second and third transfer gates.
申请公布号 US6558985(B2) 申请公布日期 2003.05.06
申请号 US20020086520 申请日期 2002.03.04
申请人 LG SEMICON CO., LTD. 发明人 LEE SEO KYU
分类号 H01L27/146;H01L27/148;H01L29/423;H04N5/335;H04N5/341;H04N5/369;H04N5/372;(IPC1-7):H01L27/14 主分类号 H01L27/146
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