| 摘要 |
PROBLEM TO BE SOLVED: To improve electromigration characteristic by reducing contact resistance between a wiring and a connection part. SOLUTION: In a first layer wiring M1, a tungsten film CM1 for preventing diffusion or the like of copper constituting a wiring is formed on a surface. When a contact hole C2 and a wiring trench HM2 are formed by etching insulating films (24a, 24b, 24c, 26b, 26c) on the first layer wiring M1, a tungsten film CM1 in a bottom part of the contact hole C2 is eliminated, and a barrier film PM2a is formed. After that, the barrier film PM2a on the bottom part of the contact hole C2 is eliminated, copper films (PM2b, PM2c) are formed, surfaces of the copper films are polished, and a second layer wiring M2 and a plug P2 which is a lower layer of the second layer wiring M2 are formed. At least one out of the tungsten film CM1 and the barrier film PM2a is eliminated, or the film CM1 and the film PM2a are constituted by using discontinuous films. As a result, contact resistance between the first layer wiring M1 and the plug P2 can be reduced. |
