| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a porous silica thin film having mechanical strength sufficiently enduring a CMP process in a copper wiring process of a semiconductor element by having a low dielectric constant of the porous silica thin film. SOLUTION: In the manufacturing method of the porous silica thin film, a silica precursor is gelled after applying an application composition for an insulation thin film containing the silica precursor containing at least a kind or more of compounds selected from specific structural alkoxysilane, its hydrolyte and condensation polymer, an organic polymer and a solvent on a substrate two times in a specific condition, silica/the organic polymer composite are film-formed, and thereafter the organic polymer is removed from the thin film. COPYRIGHT: (C)2003,JPO
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