| 摘要 |
A method for manufacturing a semiconductor device includes the steps of: sequentially forming a pad oxide layer, a nitride layer and a first photoresist layer on the semiconductor substrate; patterning the first photoresist layer into a predetermined shape to form a first photoresist layer pattern; etching the pad oxide layer, the nitride layer and the semiconductor substrate by using the first photoresist layer pattern as an etching mask, thereby forming first and second deep trench isolations in the semiconductor substrate; forming a barrier layer on an inside wall of the second deep trench isolation by performing a nitriding process after removing the first photoresist layer pattern and forming a second photoresist layer pattern at a region formed with the first deep trench isolation on the resultant material; and forming a shallow trench isolation by removing the second photoresist layer pattern and then growing silicon in the first deep trench isolation region covered with the second photoresist layer pattern by performing a silicon epitaxial growth process.
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