| 摘要 |
The optical circuit device comprises a substrate 10 of a III-V group compound semiconductor, and a magnetic semiconductor layer 14 having a chalcopyrite type crystal structure. The magnetic semiconductor having the chalcopyrite type crystal structure is a material which can provide Faraday effect, and the use of such material makes it possible to form the Faraday rotation element. Furthermore, the magnetic semiconductor having the chalcopyrite type crystal structure which can lattice-match with the substrates have little crystal defects, which can make a light loss of the Faraday rotation element small. The magnetic semiconductor of the chalcopyrite type crystal structure can provide large Verdet's constant, which makes it possible to reduce a length of the Faraday rotation element and resultantly makes it possible to micronize the optical circuit device.
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