| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device with a high DC yield and low fluctuation in an after-image characteristic of a photo diode. SOLUTION: The solid-state image pickup device includes: the photo diode for storing signal electric charges; a first read transistor that selectively reads the signal electric charges by controlling voltage applied to its gate; a photo diode resistive element manufactured by substantially the same process as that of the photo diode; a monitor circuit for approximately measuring a depletion potential of the photo diode resistive element; and a read voltage generating circuit that generates voltage applied to the gate of the first read transistor at read of the signal electric charges on the basis of the depletion potential of the photo diode resistive element. COPYRIGHT: (C)2003,JPO
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