| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device for giving a desired physical property value to a semiconductor element, and at the same time improving uniformity in the physical property value of the semiconductor substrate surface. SOLUTION: The manufacturing method includes a polysilicon film forming process S1 for forming a polysilicon film on a semiconductor substrate, an impurity introduction process S2 for introducing impurities to the polysilicon film, a first cleaning process S3 for cleaning the surface of the polysilicon film by using liquid which does not have silicon etching action, a second cleaning process S4 for cleaning the surface of the polysilicon film by demineralized water, and a drying process S5 for drying the surface of the polysilicon film. As a result, uniformity is adjusted to a predetermined range in the physical property value of the polysilicon film and the semiconductor substrate surface of the physical property value. COPYRIGHT: (C)2003,JPO
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