发明名称 SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL MODULATION ELEMENT AND SEMICONDUCTOR OPTICAL PHOTODETECTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element having an optical waveguide layer in which light in a wavelength band of 1.3μm is not absorbed and the light is effectively confined. <P>SOLUTION: The semiconductor optical element in which light having the wavelengthλLD is guided into a light absorption layer 2 through an optical waveguide layer 3, includes a semiconductor substrate 1, an optical waveguide layer which is provided on the semiconductor substrate and has a quantum well structure including a well layer and a barrier layer, a light absorption layer provided adjacent to the optical waveguide layer on the semiconductor substrate so that the light passing through the optical waveguide layer is made incident, a clad layer 4 provided on the optical waveguide layer, and on the light absorption layer, and a pair of electrodes provided to interpose the light absorption layer. The component wavelengthλ<SB>g</SB>of the well layer is longer than the wavelengthλLD and the transition energy between the ground level of a conduction band and the ground level of a valence band in the well layer is made larger than the photon energy which the light having the wavelengthλLD has. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003248204(A) 申请公布日期 2003.09.05
申请号 JP20020047662 申请日期 2002.02.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI KAZUHISA
分类号 G02F1/017;H01L31/0232;(IPC1-7):G02F1/017;H01L31/023 主分类号 G02F1/017
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