| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for selectively forming a flat epitaxial thin film by controlling a growth temperature and the flowrate of a gas raw material. SOLUTION: The method for selectively forming an epitaxial thin film on a semiconductor substrate by controlling the flowrate of a gas raw material supplied to a film-formed atmosphere has a process for obtaining the relationship between the growth speed of the epitaxial thin film and the flowrate of the gas raw material by changing the flowrate of the gas raw material that is supplied to the film-formed atmosphere under specific temperature conditions. The process for obtaining the relationship between the growth speed of the epitaxial thin film and the flowrate of the gas raw material includes a process for obtaining supply rate-controlling regions 4a, 4b, reaction rate-controlling regions 6b, 6c, and an intermediate region 5b. Furthermore, the method for forming the epitaxial thin film has a process for forming the epitaxial thin film on the semiconductor substrate by supplying the gas raw material at a flowrate in the intermediate region 5b. COPYRIGHT: (C)2003,JPO
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