发明名称 |
Low-voltage non-volatile semiconductor memory device |
摘要 |
The disclosure is a non-volatile semiconductor memory device including a bias circuit that generates a bias voltage for controlling an NMOS transistor connected to both a bit line and a page buffer circuit. The bias circuit generates a first voltage, which is greater than a power source voltage, as the bias signal in a precharge period of a read operation. The bias circuit also generates a second voltage, which is less than the power source voltage, as the bias signal in a sensing period of the read operation.
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申请公布号 |
US2003174539(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030376615 |
申请日期 |
2003.02.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYEON DAE-SEOK;LEE JUNE;LEE GYUNG-HAN |
分类号 |
G11C16/06;G11C5/14;G11C16/02;G11C16/24;G11C16/30;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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