| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving the coupling ratio of a memory cell. SOLUTION: This semiconductor device is provided with a plurality of gate- insulating films 2 formed on a semiconductor substrate 1, a plurality of floating gate electrodes 4 formed on the gate-insulating film configuring a memory cell array 3, a plurality of element isolation regions 6 formed between the floating gate electrodes and at a memory cell array edge part 5, so that the difference of height of the upper face in the memory cell array and the upper face of the floating gate electrode, can be made larger than the difference of the height of the upper face in the memory cell array edge and the upper face of the floating gate electrode, an inter-gate insulating film 8 formed on the floating gate electrode surface, a control gate electrode 11 formed on the inter-gate insulating film, and a source/drain diffusion layer formed under the side face of the edge part of the floating gate electrode in the semiconductor substrate. COPYRIGHT: (C)2004,JPO
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