发明名称 |
Reduced area intersection between electrode and programming element |
摘要 |
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining aside wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
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申请公布号 |
US2003203555(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20030438146 |
申请日期 |
2003.05.13 |
申请人 |
DENNISON CHARLES H.;WANG ALICE T.;PATEL K. C.;CHOW JENN C. |
发明人 |
DENNISON CHARLES H.;WANG ALICE T.;PATEL K. C.;CHOW JENN C. |
分类号 |
H01L21/761;H01L27/102;H01L27/24;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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