发明名称 Reduced area intersection between electrode and programming element
摘要 A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining aside wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
申请公布号 US2003203555(A1) 申请公布日期 2003.10.30
申请号 US20030438146 申请日期 2003.05.13
申请人 DENNISON CHARLES H.;WANG ALICE T.;PATEL K. C.;CHOW JENN C. 发明人 DENNISON CHARLES H.;WANG ALICE T.;PATEL K. C.;CHOW JENN C.
分类号 H01L21/761;H01L27/102;H01L27/24;(IPC1-7):H01L21/823 主分类号 H01L21/761
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