| 摘要 |
PURPOSE: A chemical mechanical polishing(CMP) method is provided to stabilize an initial polishing rate by polishing a pad composed of copper altogether with non-polishing slurry before a main wafer is polished in a CMP process. CONSTITUTION: The second pad(50) is polished by making the first pad attached to the first rotation unit contact the second pad attached to the second rotation unit(40) while predetermined chemical is supplied to the first supply unit. The third pad(30) is polished by making the third pad attached to the third rotation unit(20) contact the second pad while predetermined slurry is supplied to the second rotation unit. The third pad is composed of the same or similar material as or to a polishing target. The polishing target formed on a wafer is polished by making the second pad contact the wafer attached to the fourth rotation unit while the predetermined slurry is supplied to the second supply unit(10).
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