| 摘要 |
PURPOSE: A method for fabricating a metal-insulator-metal(MIM) capacitor is provided to prevent an etch characteristic from varying according to a change of the thickness and pattern density of an upper metal electrode by forming a trench in a region for the upper metal electrode and by depositing tungsten and performing a chemical mechanical polishing(CMP) process. CONSTITUTION: A lower metal electrode(21a) is formed on a semiconductor substrate(20). An interlayer dielectric(23) is formed on the substrate to cover the lower metal electrode. The interlayer dielectric is etched to form a contact hole exposing a predetermined portion of the lower metal electrode and form the trench for defining a region for a dielectric layer and the upper metal electrode(30). The first tungsten with such a thickness to fill only the contact hole is deposited on the dielectric layer so that a contact plug(27a) in contact with the lower metal electrode is formed in the contact hole. A dielectric layer is deposited on the first tungsten and the dielectric layer on the bottom and side surface of the contact plug and the trench. The second tungsten is deposited on the dielectric layer to fill the trench. The second tungsten is polished until the interlayer dielectric is exposed so that the upper metal electrode is formed in the trench. Metal interconnections in contact with the contact plug, the upper metal electrode and the lower metal electrode are formed.
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