发明名称 |
Diamond substrate for surface acoustic wave device, and surface acoustic wave device |
摘要 |
A diamond film is deposited in the thickness of 20 mum on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.
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申请公布号 |
US6661152(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020264264 |
申请日期 |
2002.10.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI;IMAI TAKAHIRO;UEMURA TOMOKI;KAWAGUCHI DAICHI;NAKAHATA HIDEAKI;FUJII SATOSHI |
分类号 |
H03H9/02;(IPC1-7):H03H9/25 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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