发明名称 Diamond substrate for surface acoustic wave device, and surface acoustic wave device
摘要 A diamond film is deposited in the thickness of 20 mum on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.
申请公布号 US6661152(B2) 申请公布日期 2003.12.09
申请号 US20020264264 申请日期 2002.10.04
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 ISHIBASHI KEIJI;IMAI TAKAHIRO;UEMURA TOMOKI;KAWAGUCHI DAICHI;NAKAHATA HIDEAKI;FUJII SATOSHI
分类号 H03H9/02;(IPC1-7):H03H9/25 主分类号 H03H9/02
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