| 摘要 |
The invention pertains to the quantum electronics, specifically to materials for laser technique and is intended for use in solid state lasers with emitting wavelength of between 2.8 and 3.1 mu m. The technical problem addressed by the invention is that of raising the gain of laser material, lowering the stimulation threshold of generation, increasing generation efficiency and widening the available range of the industrial generating systems with continuously variable emission wavelengths in the range 2.8 - 3.1 mu m, including those operating in short-pulse generation and amplification modes. In specific embodiments, the aim of the invention is also to prevent fissures forming in the crystal, reduce scattering, improve radiation durability, decrease dissipation and reduce passive absorption. Laser material has a garnet structure and is characterized in that it contains between 0.025 formula units (f.u.) and 2.95 f.u. of holmium and in addition at least one the following elements: Li, Be, B, Na, Ca, Mg, Si, K, Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Ge, Rb, Sr, Zr, Nb, Mo, W, Ta, Hf, Bi in a quantities of between 1 x 10<17> cm<-3> to 5 x 10 <20> cm<-3>. |
