| 摘要 |
A method for forming a silicide layer of a semiconductor memory device is disclosed. A silicide layer is formed in an impurity junction region through a contact hole exposing the impurity junction region on a semiconductor substrate. Here, two thermal annealing processes are performed on the semiconductor substrate on which a metal layer is deposited, by using low and high temperature up speeds and maintaining the semiconductor substrate under the highest temperature for less than one second, and then dropping the temperature at high speed. The process for removing a portion of the metal layer which did not react is carried out. As a result, a shallow junction can be formed in a very small devices, and deterioration of an electrical property of the semiconductor device is minimized by reducing junction leakage current, which results in the rapid operation of the device.
|
