| 摘要 |
PURPOSE: A semiconductor device and a method of fabricating the same are provided to reduce drain leakage current by improving roll-off characteristics of the threshold voltage and current drivability. CONSTITUTION: A semiconductor device includes a semiconductor substrate, a gate electrode, and a pair of impurity-diffused layers. The gate electrode(6) is formed over the semiconductor substrate(1) while placing a gate insulating film in between. The impurity-diffused layers are formed in the surface of the semiconductor substrate on both sides of the gate electrode. Each of the impurity-diffused layers includes a shallow first region partially overlapping the bottom portion of the gate electrode, a second region being deeper than the first region and overlapping the first region, and a third region having introduced therein a diffusion-suppressive substance for suppressing diffusion of an impurity contained in the first region so as to have concentration peaks at least at a first position in the vicinity of the interface with the semiconductor substrate and at the second position deeper than the first region.
|
