| 摘要 |
An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P<-> base region which is about 7 microns deep. A deep narrow N<+> emitter diffusion is at the top of the trench and a shallow P<+> contact diffusion extends between adjacent emitter diffusions. The N<+> emitter diffusions are arranged to define a minimum RB'. The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.
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