| 摘要 |
PURPOSE: A magnetoresistive random access memory(MRAM) is provided to reduce the number of metal interconnections by forming a ground interconnection on an upper part of a MTJ(Magnetic Tunnel Junction) cell and connecting all cells. CONSTITUTION: A read word line(21) is enabled while reading data, and a write word line(23) is enabled while writing the data. A field effect transistor(24) has a gate connected to the read word line and a source(25) connected to a ground. And a MTJ(Magnetic Tunnel Junction) cell is connected to the write word line and is installed between a bit line(22) and a drain(26) of the field effect transistor.
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