CELL ARRAY DEVICE OF MAGNETORESISTIVE RAM

摘要

PURPOSE: A cell array device of a magnetoresistive RAM is provided to reduce power consumption and to realize a reliable memory device by removing unnecessary leakage current flowing in an unselected cell. CONSTITUTION: A cell array device of a magnetoresistive RAM comprises a magnetic tunnel junction(MTJ)(10) storing and reading information of a bit line, and a plurality of cells where a switching device to select a corresponding cell is connected in parallel. And a switching part(20) operates while a corresponding word line is enabled at the same time and controls to form a current path in a selected cell among a plurality of the cells. The switching part comprises a plurality of transistors(T3-T8) which are connected between one end part of each switching device and a ground voltage port, and a gate and a plurality of word lines are connected to the transistors.