发明名称 DRIVE CIRCUIT FOR INSULATED GATE SEMICONDUCTOR SWITCH
摘要 <P>PROBLEM TO BE SOLVED: To simplify the construction of a drive circuit, reduce the power consumption, miniaturize the power supply, and simplify the device to reduce the price thereof. <P>SOLUTION: In a drive circuit for an insulated gate semiconductor switch wherein the semiconductor switch is turned on/off based on a control signal from a microcomputer etc., one terminal of the DC power supply for the drive circuit is connected to the emitter of a transistor, the collector of the transistor is connected to the gate of the semiconductor switch via a resistor, a transistor having a polarity complementary to that of above-mentioned transistor is connected between the gate and the emitter of the semiconductor switch, and the base of this transistor and the base of the above-mentioned transistor are connected together to a control signal terminal. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004032010(A) 申请公布日期 2004.01.29
申请号 JP20020180725 申请日期 2002.06.21
申请人 HITACHI HOME & LIFE SOLUTIONS INC 发明人 KISHI SHIGERU
分类号 H03K17/06;H03K17/60 主分类号 H03K17/06
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