Static random access memory cell and method

摘要

A method for forming a scaled static random access memory (SRAM) cell (10) based on an initial SRAM cell for implementation in a technology scaled from an initial technology. The SRAM cells comprise a plurality of transistors. The method comprises determining a reduction in a minimum gate length (46) for the scaled transistors (14, 16, 18) as compared to a minimum gate length for the initial transistors. The method also comprises forming a scaled drive transistor (16) comprising a gate having a gate length (54) reduced as compared to a gate length for an initial drive transistor. The scaled gate length (54) is reduced by less than the determined reduction in the minimum gate length (46).