| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode capable of improving the performance and reliability of an photoelectric device by forming a low resistance ohmic contact and a method for manufacturing the light emitting diode. <P>SOLUTION: The light emitting diode is constituted of a substrate, an n-type semiconductor layer formed on the substrate, an active layer formed on the n-type semiconductor layer, a p-type clad layer formed on the active layer, and a hydrogen occlusion layer formed on the p-type clad layer. Since hydrogen atoms existing near a boundary between the p-type clad layer and the hydrogen occlusion layer are adsorbed by the hydrogen occlusion layer, the carrier concentration in the p-type clad layer is increased and a low resistance ohmic contact is formed. <P>COPYRIGHT: (C)2004,JPO |
