发明名称 |
EEPROM cell with trench coupling capacitor |
摘要 |
An embodiment of the memory cell for an EEPROM device may comprise a trench coupling capacitor wherein the coupling oxide of the coupling capacitor is formed only in the trench (i.e., such that coupling occurs only in the trench). In addition, a first portion of a floating gate of the memory cell is formed in the trench to function as a part of the coupling capacitor as well as a floating gate. A floating gate second portion is electrically connected to the first portion. A control gate is connected to a doped region of the substrate and a thin tunnel dielectric physically separates the floating gate second portion from the coupling oxide layer and from the doped region of the substrate.
|
申请公布号 |
US6700154(B1) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020251608 |
申请日期 |
2002.09.20 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
VIDMANTAS DAINIUS A.;SMOAK RICHARD C.;BUI NGUYEN DUC |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|