| 摘要 |
PURPOSE: A method for crystallizing amorphous silicon and a method for fabricating an LCD by using the same are provided to obtain a crystallized thin film with high quality and minimize the damage applied to the crystallized thin film. CONSTITUTION: A method for crystallizing amorphous silicon includes the steps of forming a buffer layer(32) by vaporizing an insulating material such as SiO2 on an insulating substrate(31), wherein the buffer layer prevents the diffusion of impurities of the insulating substrate into an amorphous silicon layer. The amorphous silicon layer(33) is formed by depositing an amorphous silicon at 300-400°C by PECVD, LPCVD, or sputtering. A catalyst metal(34) is formed on the amorphous silicon layer by depositing Ni,Cu,Fe,Co,Ru,Rh,Pd,Os,Ir,Pt,Sc,Ti,V,Cr,Mn,Zn,Au,Ag or alloy thereof. The insulating substrate formed with the catalyst metal is annealed at a temperature of 500-550°C for 30 minutes or 1 hour, so that crystal nucleuses grow in a uniform direction on the amorphous silicon layer. As the catalyst metal is applied with a high voltage, silicide acts as seeds of the crystallization by the reaction between the catalyst metal and the amorphous silicon. |
