发明名称 Successful and easy method to remove polysilicon film
摘要 A method for removing a polysilicon layer from a non-silicon layer comprising the following steps. A structure having a non-silicon layer formed thereover is provided. A first polysilicon layer is formed upon the non-silicon layer. The first polysilicon layer is removed from over the non-silicon layer to expose the non-silicon layer using a NH4OH:DIW dip solution process having a NH4OH:DIW ratio of from about 1:2 to 1:8. Whereby the non-silicon layer is substantially unaffected by the NH4OH:DIW dip solution process.
申请公布号 US6703320(B1) 申请公布日期 2004.03.09
申请号 US20020036898 申请日期 2002.01.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 KU SHAO-YEN
分类号 H01L21/302;H01L21/3213;(IPC1-7):H01L21/302 主分类号 H01L21/302
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