发明名称 |
Successful and easy method to remove polysilicon film |
摘要 |
A method for removing a polysilicon layer from a non-silicon layer comprising the following steps. A structure having a non-silicon layer formed thereover is provided. A first polysilicon layer is formed upon the non-silicon layer. The first polysilicon layer is removed from over the non-silicon layer to expose the non-silicon layer using a NH4OH:DIW dip solution process having a NH4OH:DIW ratio of from about 1:2 to 1:8. Whereby the non-silicon layer is substantially unaffected by the NH4OH:DIW dip solution process.
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申请公布号 |
US6703320(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020036898 |
申请日期 |
2002.01.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
KU SHAO-YEN |
分类号 |
H01L21/302;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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