| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treating apparatus and a plasma treatment method for adjusting magnetic field strength and etching rate. <P>SOLUTION: In the plasma treating apparatus, a pair of electrodes is arranged in a treatment chamber that can be maintained in vacuum, either electrode is allowed to support a body to be treated, plasma is generated between the electrodes, a magnetic field is formed on a surface to be treated in the body to be treated by a magnetic field forming means, and the body to be treated is subjected to specific plasma treatment. The magnetic field formed by the magnetic field forming means is nearly in parallel with a surface to be treated at the center of the body to be treated, the magnetic field forming means is composed so that two annular magnets formed by annularly installing a plurality of segment magnets having a magnetization angle at least in an annular direction oppose each other via the surface to be treated, and the magnetization angles in the annular direction of at least the pair of opposing segment magnets in the segment magnets that oppose via the surface to be treated are allowed to differ each other. <P>COPYRIGHT: (C)2004,JPO |
