Atomic layer deposition method using a group IV metal precursor

摘要

Disclosed herein is an atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of -2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1 SIMILAR 4 alkyl group; and R3 is a linear or branched C1 SIMILAR 5 alkylene group. The group IV metal precursor of the present invention exhibits excellent thermal and chemical stabilities under a carrier gas atmosphere, whereas it has high reactivity with a reaction gas.