| 发明名称 |
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS |
| 摘要 |
Device structure and fabrication methods for a bipolar junction transistor. A base layer is formed and an emitter is formed on a first portion of the base layer. A dopant-containing layer is deposited on a second portion of the base layer. Dopant is transferred from the dopant-containing layer into the second portion of the base layer to define an extrinsic base of the device structure. |
| 申请公布号 |
US2016380055(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201514749836 |
申请日期 |
2015.06.25 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Camillo-Castillo Renata;Harame David L.;Liu Qizhi |
| 分类号 |
H01L29/10;H01L21/324;H01L29/08;H01L21/225;H01L29/73;H01L29/66 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a device structure, the method comprising:
forming a base layer; forming an emitter on a first portion of the base layer; depositing a dopant-containing layer on a second portion of the base layer; and transferring dopant from the dopant-containing layer into the second portion of the base layer to define an extrinsic base of the device structure. |
| 地址 |
Armonk NY US |
