| 摘要 |
PURPOSE: A method for depositing amorphous silicon by a high-density plasma CVD(Chemical Vapor Deposition) technique is provided to deposit amorphous silicon by supplying argon and silane, and to supply argon gas with silane gas together, thereby realizing a fast depositing speed. CONSTITUTION: A system firstly supplies argon plasma, and performs a surface treatment of a membrane(S201). The system supplies argon gas with silane gas together, and deposits amorphous silicon(S202). The system carries out a thermal treatment, and executes a crystallization step(S203). Before depositing the amorphous silicon, the system performs the surface treatment of the membrane by spacing the argon plasma for a sufficient time, in order to realize good interface features between the membrane and a silicon film. |
