发明名称 Semiconductor integrated circuit having switching transistors and varactors
摘要 A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.
申请公布号 US6731153(B2) 申请公布日期 2004.05.04
申请号 US20010963500 申请日期 2001.09.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;USAMI TAMOTSU;MATSUSHITA ELECTRIC IND CO LTD;OKI ELECTRIC IND CO LTD;SANYO ELECTRIC CO;SHARP KK;SONY CORP;TOKYO SHIBAURA ELECTRIC CO;NIPPON ELECTRIC CO;HITACHI LTD;FUJITSU LTD;MITSUBISHI ELECTRIC CORP;ROHM CO LTD 发明人 OTSUKA KANJI;USAMI TAMOTSU
分类号 H01L27/04;H01L21/822;H01L21/8222;H01L21/8236;H01L27/06;H01L27/088;H03K19/017;(IPC1-7):H03K17/04 主分类号 H01L27/04
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