| 摘要 |
A semiconductor device includes trench lateral MOSFET's, each trench lateral MOSFET includes a trench; an oblong n<+>-type source region; an oblong n<+>-type drain regions; and an n<->-type offset drain region; the direction parallel to the short edge portions of n<+>-type source region and n<+>-type drain region being defined as an x-direction; the direction perpendicular to the x-direction being defined as a y-direction; n<->-type offset drain region surrounding the short edge portions, extending in the x-direction, of n<+>-type drain region 7 such that the offset drain length in the y-direction is longer than the offset drain length in the x-direction along the side walls and the bottom wall of trench to secure a sufficient offset drain length in the y-direction and to relax the electric field localization to the short edge portion, extending in the x-direction, of n<+>-type drain region.
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