发明名称 Semiconductor device
摘要 Three or more MESFETs are fabricated side by side on a semiconductor chip. A transmission line substantially identical in width with an area within which the MESFETS are fabricated is formed in parallel with the row of MESFETs. The MESFETs are connected to the transmission line at a side, constituting one edge of the transmission line. Further, regulation circuits are connected in shunt with the transmission line, and outputs of the MESFESTS are merged while being matched by the transmission line and the regulation circuits.
申请公布号 US6730945(B2) 申请公布日期 2004.05.04
申请号 US20020194223 申请日期 2002.07.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 CHAKI SHIN
分类号 H01P1/00;H03F1/30;H03F3/60;H03F3/68;(IPC1-7):H01L29/49 主分类号 H01P1/00
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