发明名称 |
ELECTRO-OPTICAL DEVICE FOR ENHANCING A LIGHT SHIELDING PERFORMANCE WITH RESPECT TO A SEMICONDUCTOR LAYER OF A TFT AND AN ELECTRONIC DEVICE |
摘要 |
PURPOSE: An electro-optical device and an electronic device are provided to restrain the generation of light leak current by enhancing a light shielding performance with respect to a semiconductor layer of a TFT(Thin Film Transistor). CONSTITUTION: A data line(6a) is extended in the first direction. A scan line(3a) is extended in the second direction crossed with the data line. A pixel electrode(9a) and a TFT(Thin Film Transistor)(30) are disposed to correspond to a cross region of the data line and the scan line. A storage capacitor(70) is electrically connected to the TFT and the pixel electrode. The TFT has a semiconductor layer(1a). The semiconductor layer includes a channel region extended in a longitudinal direction and a channel adjacent region more extended from the channel region in the longitudinal direction. The scan line has a light shielding part at a side of the channel region.
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申请公布号 |
KR20040038842(A) |
申请公布日期 |
2004.05.08 |
申请号 |
KR20030076338 |
申请日期 |
2003.10.30 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KAWATA HIDENORI;TSUNEKAWA YOSHIFUMI;HAYASHI TOMOHIKO |
分类号 |
G02F1/1368;G02F1/1335;G02F1/1362;H01L29/786;(IPC1-7):G02F1/133 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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