| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a phase shift mask in photolithographic process. <P>SOLUTION: A substrate to be applied for a photolithographic process is prepared, on which a high transmittance attenuated layer (HTAL) is formed. An opaque layer is formed on the high transmittance attenuated layer. Then the opaque layer is etched to segment a first phase region and a second phase region in the high transmittance attenuated layer. Then a photoresist layer is applied on the second phase region and the opaque layer, the local surface of the high transmittance attenuated layer in the first phase region is exposed to light, and the substrate is etched to specified depth through the local surface of the high transmittance attenuated layer in the phase shift region. Finally, the photoresist layer is removed to form the phase shift region in the etching region and to form a non-phase shift region in the non-etched region. Thus, the obtained phase shift mask gives uniform exposure intensity. <P>COPYRIGHT: (C)2004,JPO</p> |
